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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2334 DESCRIPTION With TO-220 package Complement to type 2SA1010 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER CHA IN Collector current Collector-base voltage E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 150 100 7 7 15 3.5 UNIT V V V A A A Open emitter Collector-emitter voltage Emitter-base voltage Open collector Collector current-peak Base current Ta=25ae 1.5 W 40 150 -55~150 ae ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5.0A ,IB=0.5A,L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VCE=100V; VBE(off)=-1.5V Ta=125ae VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=5A ; VCE=5V 40 40 MIN 100 TYP. 2SC2334 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 MAX UNIT V 0.6 1.5 10 10 1.0 10 |I |I V V A A mA |I A Switching times resistive load ton ts tf Turn-on time Storage time Fall time INC L 60-120 E SEM ANG H K 100-200 OND IC 20 TOR UC 0.5 1.5 0.5 |I |I |I s s s 200 IC=5.0A IB1=-IB2=0.5A RL=10| ;VCCO 50V hFE-2 Classifications M 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2334 CHA IN E SEM NG OND IC 0.10 mm) TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2334 CHA IN E SEM NG OND IC TOR UC 4 |
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